High-density storage and breakthrough in key technologies for magnetic electronic materials



Resistive memory, phase change memory, magnetic memory, high-sensitivity magnetic sensor and isolated coupling device are new types of storage and magnetic electronics with good application prospects. They have a wide range of applications in fields such as mobile communications, personal computers, digital cameras, and electronic tags. Market value. During the "Twelfth Five-Year Plan" period, the 863 Program's new materials technology field supported the "High Density Storage and Magnetic Electron Materials Key Technologies" theme project. Recently, the High-tech Division of the Ministry of Science and Technology organized an expert review of the subject project in Beijing.
The project carried out a research on the combination of resistive and electrode material systems compatible with CMOS technology, and researched and developed TaOx resistive memory; the chip manufacturing was based on an 8-inch 0.13-μm standard logic production process line from SMIC IC Manufacturing Co., Ltd. Take time to reach 10 nanoseconds, write operation voltage meets 0.13 μm or 0.11 μm technology standard logic process IO withstanding voltage; new superlattice phase change material with low thermal conductivity is developed, and asymmetric ring microelectrode is developed. Phase change memory cells of the structure are used to prepare phase change memory arrays; magnetic tunnel junctions and other magnetic materials are studied; magnetic sensor prototypes based on magnetic gangue junctions are prepared; and magnetic-electronic material based non-volatile materials are completed. Latching function of dual-core and three-core single-channel data isolation coupling interface chip. The implementation of this project has broken through the key technologies of advanced high-density storage and magnetic electronic material devices, cultivated a high-level information storage and magnetic electronic device R&D team, and has a supporting role for the development of China's new electronic material technology and information industry.
During the “Thirteenth Five-Year Plan” period, in order to further promote the scientific and technological innovation and industrialization development in the field of materials in China, the Ministry of Science and Technology formulated the “Special Plan for Scientific and Technological Innovation in the “Thirteenth Five-Year Plan” Material Sector” and listed “Strategic Advanced Electronic Materials” as development. One of the key points, focusing on the research and development of third-generation semiconductor and microelectronics materials, focusing on addressing the major common issues faced by the semiconductor and microelectronics industries, and the formation of core semiconductor materials, the optimization of production process flow, and the development of key technologies. Breakthrough, and strive to promote the integration of cross-border technology, to seize the commanding heights of advanced electronic materials technology.

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