According to researchers at the Georgia Institute of Technology in the United States, graphite can carry up to nearly 1000 times more current than conventional copper interconnects that are less than 22 nanometers wide and operate at temperatures that are more than 10 times lower.
The rate of electron transfer in graphite has been touted as better than copper, but the Georgian Institute's 16-nanometer wide nanoribbon data only quantifies how superior it is to copper compared to carbon. Tested by the Georgia Institute, graphite nanoribbons can deliver up to 10 billion amps per square centimeter of electricity, up to 1000 times higher than copper.
“Before that, no one has ever measured the current carrying capacity of graphite,†said Raghunath Murali, senior research engineer at the Nanotechnology Research Center at Georgia Tech. “The performance of graphite has not been excavated before. One possibility is Prior to the results of our experiments, no relevant studies have been conducted.
Since the thermal conductivity of carbon is much higher than that of copper, the graphite nanobelts composed of carbon with high current carrying capacity have less corresponding heat generation. Graphite nanoribbons have a thermal conductivity of 1000-1500 watts per meter Kelvin - 10 times stronger than copper. Researchers at the Georgia Institute also issued a statement that graphite nanoribbons can slow electron migration, a problem that often occurs when the linewidth of copper drops to the nanometer level.
“If the amount of current carried is close to the current carrying capacity of the line, the probability of electron migration is greater than when the current carrying capacity is much less than the current carrying capacity,†Murali said. “Graphite is more than two orders of magnitude higher than copper. The current carrying capacity, so graphite can better prevent electron migration when the graphite wire and copper wire carry the same amount of current."
Murali's team obtained their graphite samples by taking thin layers from the graphite blocks and depositing them on SOI wafers. Electron beam lithography is then used to fabricate the metal contacts and cut the graphite into parallel lines of 16-52 nm wide and 200-1000 nm long.
According to researchers at the Georgia Institute of Technology, there are three obstacles to the commercialization of graphite interconnects: how to grow graphite layers on the entire wafer (because it can only be in the small centimeter range today). Easily grow graphite layers), how to form vias to connect graphite nanowires, and integrate graphite into the back end of CMOS process lines.
Murali did the work with his men, Yinxiao Yang, Kevin Brenner, Thomas Beck and Juames Meindl. The research was co-sponsored by Semiconductor Research, the Defense Advanced Research Projects Agency, the Interconnect Focus Center, nanoelectronics research institutes, and nanoelectronics invention and exploration agencies.
The rate of electron transfer in graphite has been touted as better than copper, but the Georgian Institute's 16-nanometer wide nanoribbon data only quantifies how superior it is to copper compared to carbon. Tested by the Georgia Institute, graphite nanoribbons can deliver up to 10 billion amps per square centimeter of electricity, up to 1000 times higher than copper.
“Before that, no one has ever measured the current carrying capacity of graphite,†said Raghunath Murali, senior research engineer at the Nanotechnology Research Center at Georgia Tech. “The performance of graphite has not been excavated before. One possibility is Prior to the results of our experiments, no relevant studies have been conducted.
Since the thermal conductivity of carbon is much higher than that of copper, the graphite nanobelts composed of carbon with high current carrying capacity have less corresponding heat generation. Graphite nanoribbons have a thermal conductivity of 1000-1500 watts per meter Kelvin - 10 times stronger than copper. Researchers at the Georgia Institute also issued a statement that graphite nanoribbons can slow electron migration, a problem that often occurs when the linewidth of copper drops to the nanometer level.
“If the amount of current carried is close to the current carrying capacity of the line, the probability of electron migration is greater than when the current carrying capacity is much less than the current carrying capacity,†Murali said. “Graphite is more than two orders of magnitude higher than copper. The current carrying capacity, so graphite can better prevent electron migration when the graphite wire and copper wire carry the same amount of current."
Murali's team obtained their graphite samples by taking thin layers from the graphite blocks and depositing them on SOI wafers. Electron beam lithography is then used to fabricate the metal contacts and cut the graphite into parallel lines of 16-52 nm wide and 200-1000 nm long.
According to researchers at the Georgia Institute of Technology, there are three obstacles to the commercialization of graphite interconnects: how to grow graphite layers on the entire wafer (because it can only be in the small centimeter range today). Easily grow graphite layers), how to form vias to connect graphite nanowires, and integrate graphite into the back end of CMOS process lines.
Murali did the work with his men, Yinxiao Yang, Kevin Brenner, Thomas Beck and Juames Meindl. The research was co-sponsored by Semiconductor Research, the Defense Advanced Research Projects Agency, the Interconnect Focus Center, nanoelectronics research institutes, and nanoelectronics invention and exploration agencies.
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